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MCD250-08IO1

EXSHINE Part Number:EX-MCD250-08IO1
Manufacturer Part Number:MCD250-08IO1
Manufacturer / Brand:IXYS Corporation
Brief Description:MOD THYRISTOR/DIODE 800V Y2-DCB
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:MCD250-08IO1
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
MCD250-08IO1
In stock: 9979 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order MCD250-08IO1 online

US$ 106.53

Reference Marketing Price: US$ 106.53

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$106.53
  • Description
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Product Parameter

Voltage - Off State 800V
Voltage - Gate Trigger (Vgt) (Max) 2V
Structure Series Connection - SCR/Diode
Series -
Packaging Bulk
Package / Case Y2-DCB
Operating Temperature -40°C ~ 140°C (TJ)
Number of SCRs, Diodes 1 SCR, 1 Diode
Mounting Type Chassis Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Manufacturer Part Number MCD250-08IO1
Expanded Description SCR Module 800V 450A Series Connection - SCR/Diode Chassis Mount Y2-DCB
Description MOD THYRISTOR/DIODE 800V Y2-DCB
Current - On State (It (RMS)) (Max) 450A
Current - On State (It (AV)) (Max) 221A
Current - Non Rep. Surge 50, 60Hz (Itsm) 8000A, 8500A
Current - Hold (Ih) (Max) 150mA
Current - Gate Trigger (Igt) (Max) 150mA

Others

Standard Package 2

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

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 MoneyGram
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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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