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MID150-12A4

EXSHINE Part Number:EX-MID150-12A4
Manufacturer Part Number:MID150-12A4
Manufacturer / Brand:IXYS Corporation
Brief Description:MOD IGBT RBSOA 1200V 180A Y3-DCB
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:M(II,ID,DI)150-12A4
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
MID150-12A4
In stock: 24380 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order MID150-12A4 online

US$ 92.25

Reference Marketing Price: US$ 92.25

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$92.25
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 100A
Supplier Device Package Y3-DCB
Series -
Power - Max 760W
Package / Case Y3-DCB
Operating Temperature 150°C (TJ)
NTC Thermistor No
Mounting Type Chassis Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number MID150-12A4
Input Capacitance (Cies) @ Vce 6.6nF @ 25V
Input Standard
IGBT Type NPT
Expanded Description IGBT Module NPT Single 1200V 180A 760W Chassis Mount Y3-DCB
Description MOD IGBT RBSOA 1200V 180A Y3-DCB
Current - Collector Cutoff (Max) 7.5mA
Current - Collector (Ic) (Max) 180A
Configuration Single

Others

Standard Package 2

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

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 Receiving: immediately.

 Western Union
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 MoneyGram
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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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