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MIXA61H1200ED

EXSHINE Part Number:EX-MIXA61H1200ED
Manufacturer Part Number:MIXA61H1200ED
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT MODULE 1200V 60A
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:MIXA61H1200ED
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
MIXA61H1200ED
In stock: 79180 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order MIXA61H1200ED online

US$ 60.94

Reference Marketing Price: US$ 60.94

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Multiples:1

6+:
$60.94
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 55A
Supplier Device Package E2
Series -
Power - Max 290W
Package / Case E2
Operating Temperature -40°C ~ 125°C (TJ)
NTC Thermistor No
Mounting Type Chassis Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number MIXA61H1200ED
Input Capacitance (Cies) @ Vce -
Input Standard
IGBT Type PT
Expanded Description IGBT Module PT Full Bridge Inverter 1200V 85A 290W Chassis Mount E2
Description IGBT MODULE 1200V 60A
Current - Collector Cutoff (Max) 500µA
Current - Collector (Ic) (Max) 85A
Configuration Full Bridge Inverter

Others

Standard Package 6

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

 Paypal
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 Western Union
 Receiving: 1-2 hours.

 MoneyGram
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 Alipay
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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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