HN3C10FUTE85LF

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HN3C10FUTE85LF

EXSHINE Part Number:EX-HN3C10FUTE85LF
Manufacturer Part Number:HN3C10FUTE85LF
Manufacturer / Brand:Toshiba Semiconductor and Storage
Brief Description:TRANSISTOR NPN US6
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:HN3C10FUTE85LF
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
HN3C10FUTE85LF
In stock: 30130000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 0.61

Reference Marketing Price: US$ 0.61

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

1+:
$0.61
10+:
$0.511
25+:
$0.447
100+:
$0.383
  • Description
  • Payment
  • Shipping
  • Packaging

Product Parameter

Voltage - Collector Emitter Breakdown (Max) 12V
Transistor Type 2 NPN (Dual)
Supplier Device Package US6
Series -
Power - Max 200mW
Packaging Cut Tape (CT)
Package / Case 6-TSSOP, SC-88, SOT-363
Other Names HN3C10FUTE85LFCT
Operating Temperature -
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number HN3C10FUTE85LF
Gain 11.5dB
Frequency - Transition 7GHz
Expanded Description RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6
Description TRANSISTOR NPN US6
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA, 10V
Current - Collector (Ic) (Max) 80mA

Others

Other Names HN3C10FUTE85LFCT
Standard Package 1

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Distributor of Toshiba Semiconductor and Storage

- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

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