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SI1988DH-T1-GE3
| EXSHINE Part Number: | EX-SI1988DH-T1-GE3 |
|---|---|
| Manufacturer Part Number: | SI1988DH-T1-GE3 |
| Manufacturer / Brand: | Vishay / Siliconix |
| Brief Description: | MOSFET 2N-CH 20V 1.3A SC-70-6 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Condition: | New and unused, Original |
| Datasheet Download: | SI1988DH |
| Application: | - |
| Weight: | - |
| Alternative Replacement: | - |
Real Time Availability for
SI1988DH-T1-GE3
In stock: 33557 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
In stock: 33557 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
- Description
- Payment
- Shipping
- Packaging
Product Parameter
| Vgs(th) (Max) @ Id | 1V @ 250µA |
|---|---|
| Supplier Device Package | SC-70-6 (SOT-363) |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 168 mOhm @ 1.4A, 4.5V |
| Power - Max | 1.25W |
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Other Names | SI1988DH-T1-GE3TR SI1988DHT1GE3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Part Number | SI1988DH-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.1nC @ 8V |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Expanded Description | Mosfet Array 2 N-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6 (SOT-363) |
| Drain to Source Voltage (Vdss) | 20V |
| Description | MOSFET 2N-CH 20V 1.3A SC-70-6 |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
Others
| Standard Package | 3,000 |
|---|---|
| Other Names | SI1988DH-T1-GE3TR SI1988DHT1GE3 |
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EMS EXPRESS Delivery time: 7-10 days. |
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