SI3460BDV-T1-GE3

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SI3460BDV-T1-GE3

EXSHINE Part Number:EX-SI3460BDV-T1-GE3
Manufacturer Part Number:SI3460BDV-T1-GE3
Manufacturer / Brand:Vishay / Siliconix
Brief Description:MOSFET N-CH 20V 8A 6-TSOP
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:SI3460BDV
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
SI3460BDV-T1-GE3
In stock: 31284000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 0.334

Reference Marketing Price: US$ 0.334

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Product Parameter

Vgs(th) (Max) @ Id 1V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package 6-TSOP
Series TrenchFET®
Rds On (Max) @ Id, Vgs 27 mOhm @ 5.1A, 4.5V
Power Dissipation (Max) 2W (Ta), 3.5W (Tc)
Packaging Tape & Reel (TR)
Package / Case SOT-23-6 Thin, TSOT-23-6
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 15 Weeks
Manufacturer Part Number SI3460BDV-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 8V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP
Drain to Source Voltage (Vdss) 20V
Description MOSFET N-CH 20V 8A 6-TSOP
Current - Continuous Drain (Id) @ 25°C 8A (Tc)

Others

Standard Package 3,000

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Distributor of Vishay Siliconix

- Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Vishay is proud to be a major partner with exshinetech.com.

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