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SI4210DY-T1-GE3
| EXSHINE Part Number: | EX-SI4210DY-T1-GE3 |
|---|---|
| Manufacturer Part Number: | SI4210DY-T1-GE3 |
| Manufacturer / Brand: | Vishay / Siliconix |
| Brief Description: | MOSFET 2N-CH 30V 6.5A 8-SOIC |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Condition: | New and unused, Original |
| Datasheet Download: | SI4210DY |
| Application: | - |
| Weight: | - |
| Alternative Replacement: | - |
Real Time Availability for
SI4210DY-T1-GE3
In stock: 12196000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
In stock: 12196000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
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Product Parameter
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
|---|---|
| Supplier Device Package | 8-SO |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 35.5 mOhm @ 5A, 10V |
| Power - Max | 2.7W |
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Other Names | SI4210DY-T1-GE3-ND SI4210DY-T1-GE3TR SI4210DYT1GE3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 24 Weeks |
| Manufacturer Part Number | SI4210DY-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds | 445pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Expanded Description | Mosfet Array 2 N-Channel (Dual) 30V 6.5A 2.7W Surface Mount 8-SO |
| Drain to Source Voltage (Vdss) | 30V |
| Description | MOSFET 2N-CH 30V 6.5A 8-SOIC |
| Current - Continuous Drain (Id) @ 25°C | 6.5A |
Others
| Standard Package | 2,500 |
|---|---|
| Other Names | SI4210DY-T1-GE3-ND SI4210DY-T1-GE3TR SI4210DYT1GE3 |
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EMS EXPRESS Delivery time: 7-10 days. |
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