EPC2025ENGR

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EPC2025ENGR

EXSHINE Part Number:EX-EPC2025ENGR
Manufacturer Part Number:EPC2025ENGR
Manufacturer / Brand:EPC
Brief Description:TRANS GAN 300V 4A BUMPED DIE
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:EPC2025 Datasheet
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
EPC2025ENGR
In stock: 68680 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order EPC2025ENGR online

US$ 7.615

Reference Marketing Price: US$ 7.615

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

100+:
$7.615
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Product Parameter

Vgs(th) (Max) @ Id 2.5V @ 1mA
Technology GaNFET (Gallium Nitride)
Supplier Device Package Die Outline (12-Solder Bar)
Series eGaN®
Rds On (Max) @ Id, Vgs 150 mOhm @ 3A, 5V
Power Dissipation (Max) -
Packaging Tray
Package / Case Die
Other Names 917-EPC2025ENGR
EPC2025ENGRC
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number EPC2025ENGR
Input Capacitance (Ciss) (Max) @ Vds 194pF @ 240V
Gate Charge (Qg) (Max) @ Vgs 1.85nC @ 5V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 300V 4A (Ta) Surface Mount Die Outline (12-Solder Bar)
Drain to Source Voltage (Vdss) 300V
Description TRANS GAN 300V 4A BUMPED DIE
Current - Continuous Drain (Id) @ 25°C 4A (Ta)

Others

Other Names 917-EPC2025ENGR

EPC2025ENGRC
Standard Package 10

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 T/T (Bank Transfer)
 Receiving: 1-4 days.

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If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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