EPC2100ENGRT

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EPC2100ENGRT

EXSHINE Part Number:EX-EPC2100ENGRT
Manufacturer Part Number:EPC2100ENGRT
Manufacturer / Brand:EPC
Brief Description:MOSFET ARRAY 2N-CH 30V DIE
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:EPC2100 Preliminary Datasheet
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
EPC2100ENGRT
In stock: 73990 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order EPC2100ENGRT online

US$ 4.948

Reference Marketing Price: US$ 4.948

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

500+:
$4.948
1000+:
$4.309
  • Description
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Product Parameter

Vgs(th) (Max) @ Id 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package Die
Series eGaN®
Rds On (Max) @ Id, Vgs 8 mOhm @ 25A, 5V, 2 mOhm @ 25A, 5V
Power - Max -
Packaging Tape & Reel (TR)
Package / Case Die
Other Names 917-EPC2100ENGRTR
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 22 Weeks
Manufacturer Part Number EPC2100ENGRT
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 15V, 1700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 15V, 15nC @ 15V
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Expanded Description Mosfet Array 2 N-Channel (Half Bridge) 30V 9.5A (Tj), 38A (Tj) Surface Mount Die
Drain to Source Voltage (Vdss) 30V
Description MOSFET ARRAY 2N-CH 30V DIE
Current - Continuous Drain (Id) @ 25°C 9.5A (Tj), 38A (Tj)

Others

Other Names 917-EPC2100ENGRTR
Standard Package 500

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Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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