EPC2105ENG

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EPC2105ENG

EXSHINE Part Number:EX-EPC2105ENG
Manufacturer Part Number:EPC2105ENG
Manufacturer / Brand:EPC
Brief Description:TRANS GAN 2N-CH 80V BUMPED DIE
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:EPC2105 Preliminary~
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
EPC2105ENG
In stock: 13273 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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Product Parameter

Vgs(th) (Max) @ Id 2.5V @ 2.5mA
Supplier Device Package Die
Series eGaN®
Rds On (Max) @ Id, Vgs 14.5 mOhm @ 20A, 5V
Power - Max -
Packaging Bulk
Package / Case Die
Other Names EPC2105ENGR
917-EPC2105ENG
EPC2105ENGR
EPC2105ENGRH4
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number EPC2105ENG
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Expanded Description Mosfet Array 2 N-Channel (Half Bridge) 80V 9.5A, 38A Surface Mount Die
Drain to Source Voltage (Vdss) 80V
Description TRANS GAN 2N-CH 80V BUMPED DIE
Current - Continuous Drain (Id) @ 25°C 9.5A, 38A

Others

Other Names EPC2105ENGR

917-EPC2105ENG

EPC2105ENGR

EPC2105ENGRH4
Standard Package 10

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 Delivery time: 7-10 days.


Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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