EPC2106ENGRT

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EPC2106ENGRT

EXSHINE Part Number:EX-EPC2106ENGRT
Manufacturer Part Number:EPC2106ENGRT
Manufacturer / Brand:EPC
Brief Description:TRANS GAN 2N-CH 100V BUMPED DIE
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:EPC2106 Preliminary
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
EPC2106ENGRT
In stock: 52352000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order EPC2106ENGRT online

US$ 0.794

Reference Marketing Price: US$ 0.794

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

2500+:
$0.794
5000+:
$0.764
  • Description
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Product Parameter

Vgs(th) (Max) @ Id 2.5V @ 600µA
Supplier Device Package Die
Series eGaN®
Rds On (Max) @ Id, Vgs 70 mOhm @ 2A, 5V
Power - Max -
Packaging Tape & Reel (TR)
Package / Case Die
Other Names 917-EPC2106ENGRTR
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number EPC2106ENGRT
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Expanded Description Mosfet Array 2 N-Channel (Half Bridge) 100V 1.7A Surface Mount Die
Drain to Source Voltage (Vdss) 100V
Description TRANS GAN 2N-CH 100V BUMPED DIE
Current - Continuous Drain (Id) @ 25°C 1.7A

Others

Standard Package 2,500
Other Names 917-EPC2106ENGRTR

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

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If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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