EPC2110ENGRT

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EPC2110ENGRT

EXSHINE Part Number:EX-EPC2110ENGRT
Manufacturer Part Number:EPC2110ENGRT
Manufacturer / Brand:EPC
Brief Description:TRANS GAN 2N-CH 120V BUMPED DIE
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:EPC2110 Preliminary Datasheet
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
EPC2110ENGRT
In stock: 41070000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order EPC2110ENGRT online

US$ 1.035

Reference Marketing Price: US$ 1.035

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

2500+:
$1.035
5000+:
$0.996
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Product Parameter

Vgs(th) (Max) @ Id 2.5V @ 700µA
Supplier Device Package Die
Series eGaN®
Rds On (Max) @ Id, Vgs 60 mOhm @ 4A, 5V
Power - Max -
Packaging Tape & Reel (TR)
Package / Case Die
Other Names 917-EPC2110ENGRTR
EPC2110ENGR
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number EPC2110ENGRT
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V
FET Type 2 N-Channel (Dual) Common Source
FET Feature GaNFET (Gallium Nitride)
Expanded Description Mosfet Array 2 N-Channel (Dual) Common Source 120V 3.4A Surface Mount Die
Drain to Source Voltage (Vdss) 120V
Description TRANS GAN 2N-CH 120V BUMPED DIE
Current - Continuous Drain (Id) @ 25°C 3.4A

Others

Other Names 917-EPC2110ENGRTR

EPC2110ENGR
Standard Package 2,500

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Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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