EPC2108ENGRT

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EPC2108ENGRT

EXSHINE Part Number:EX-EPC2108ENGRT
Manufacturer Part Number:EPC2108ENGRT
Manufacturer / Brand:EPC
Brief Description:TRANS GAN 3N-CH BUMPED DIE
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:EPC2108 Preliminary Datasheet
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
EPC2108ENGRT
In stock: 56939000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order EPC2108ENGRT online

US$ 0.836

Reference Marketing Price: US$ 0.836

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

2500+:
$0.836
5000+:
$0.805
  • Description
  • Payment
  • Shipping
  • Packaging

Product Parameter

Vgs(th) (Max) @ Id 2.5V @ 200µA
Supplier Device Package Die
Series eGaN®
Rds On (Max) @ Id, Vgs 190 mOhm @ 2.5A, 5V
Power - Max -
Packaging Tape & Reel (TR)
Package / Case Die
Other Names 917-EPC2108ENGRTR
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number EPC2108ENGRT
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 0.22nC @ 5V
FET Type 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature GaNFET (Gallium Nitride)
Expanded Description Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA Surface Mount Die
Drain to Source Voltage (Vdss) 60V, 100V
Description TRANS GAN 3N-CH BUMPED DIE
Current - Continuous Drain (Id) @ 25°C 1.7A, 500mA

Others

Other Names 917-EPC2108ENGRTR
Standard Package 2,500

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 Delivery time: 1-3 days.
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 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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