EXSHINE Part Number: | EX-EPC2102ENG |
---|---|
Manufacturer Part Number: | EPC2102ENG |
Manufacturer / Brand: | EPC |
Brief Description: | TRANS GAN 2N-CH 60V BUMPED DIE |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Condition: | New and unused, Original |
Datasheet Download: | EPC2102 Preliminary Spec Sheet~ |
Application: | - |
Weight: | - |
Alternative Replacement: | - |
Vgs(th) (Max) @ Id | 2.5V @ 7mA |
---|---|
Supplier Device Package | Die |
Series | eGaN® |
Rds On (Max) @ Id, Vgs | 4.4 mOhm @ 20A, 5V |
Power - Max | - |
Packaging | Tray |
Package / Case | Die |
Other Names | 917-EPC2102ENG EPC2102ENGRH6 |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Part Number | EPC2102ENG |
Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 5V |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | GaNFET (Gallium Nitride) |
Expanded Description | Mosfet Array 2 N-Channel (Half Bridge) 60V 23A Surface Mount Die |
Drain to Source Voltage (Vdss) | 60V |
Description | TRANS GAN 2N-CH 60V BUMPED DIE |
Current - Continuous Drain (Id) @ 25°C | 23A |
Standard Package | 10 |
---|---|
Other Names | 917-EPC2102ENG EPC2102ENGRH6 |
|
T/T (Bank Transfer) Receiving: 1-4 days. |
|
Paypal Receiving: immediately. |
|
Western Union Receiving: 1-2 hours. |
|
MoneyGram Receiving: 1-2 hours. |
|
Alipay Receiving: immediately. |
![]() |
DHL EXPRESS Delivery time: 1-3 days. |
![]() |
FEDEX EXPRESS Delivery time: 1-3 days. |
![]() |
UPS EXPRESS Delivery time: 2-4 days. |
![]() |
TNT EXPRESS Delivery time: 3-6 days. |
![]() |
EMS EXPRESS Delivery time: 7-10 days. |
- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.