EPC9029

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EPC9029

EXSHINE Part Number:EX-EPC9029
Manufacturer Part Number:EPC9029
Manufacturer / Brand:EPC
Brief Description:BOARD DEV FOR EPC8009 65V EGAN
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:EPC9022-30 Quick Start GuideEPC8009 Datasheet
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
EPC9029
In stock: 8872 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order EPC9029 online

US$ 143.75

Reference Marketing Price: US$ 143.75

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

1+:
$143.75
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Product Parameter

Utilized IC / Part EPC8009
Supplied Contents Board
Series eGaN®
Secondary Attributes -
Primary Attributes -
Other Names 917-1046
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number EPC9029
Main Purpose Power Management, Half H-Bridge Driver (External FET)
Expanded Description EPC8009 eGaN® Series Power Management, Half H-Bridge Driver (External FET) Evaluation Board
Embedded No
Description BOARD DEV FOR EPC8009 65V EGAN

Others

Standard Package 40
Other Names 917-1046

You can choose the below payment options. Please contact our sales team if you have any questions.

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 Receiving: 1-4 days.

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If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

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 Delivery time: 1-3 days.
 FEDEX EXPRESS
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 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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