EPC9030

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EPC9030

EXSHINE Part Number:EX-EPC9030
Manufacturer Part Number:EPC9030
Manufacturer / Brand:EPC
Brief Description:BOARD DEV FOR EPC8010 100V EGAN
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:EPC9022-30 Quick Start Guide
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
EPC9030
In stock: 2419 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order EPC9030 online

US$ 143.75

Reference Marketing Price: US$ 143.75

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

1+:
$143.75
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Product Parameter

Utilized IC / Part EPC8010
Supplied Contents Board
Series eGaN®
Secondary Attributes -
Primary Attributes -
Other Names 917-1047
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number EPC9030
Main Purpose Power Management, Half H-Bridge Driver (External FET)
Expanded Description EPC8010 eGaN® Series Power Management, Half H-Bridge Driver (External FET) Evaluation Board
Embedded No
Description BOARD DEV FOR EPC8010 100V EGAN

Others

Standard Package 40
Other Names 917-1047

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

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 Receiving: immediately.

 Western Union
 Receiving: 1-2 hours.

 MoneyGram
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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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