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MIXA20W1200MC

EXSHINE Part Number:EX-MIXA20W1200MC
Manufacturer Part Number:MIXA20W1200MC
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT MODULE 1200V 20A HEX
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:MIXA20W1200MC
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
MIXA20W1200MC
In stock: 46990 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order MIXA20W1200MC online

US$ 35.095

Reference Marketing Price: US$ 35.095

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

25+:
$35.095
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 16A
Supplier Device Package ECO-PAC2
Series -
Power - Max 100W
Package / Case ECO-PAC2
Operating Temperature -40°C ~ 125°C (TJ)
NTC Thermistor No
Mounting Type Chassis Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number MIXA20W1200MC
Input Capacitance (Cies) @ Vce -
Input Standard
IGBT Type PT
Expanded Description IGBT Module PT Three Phase Inverter 1200V 28A 100W Chassis Mount ECO-PAC2
Description IGBT MODULE 1200V 20A HEX
Current - Collector Cutoff (Max) 200µA
Current - Collector (Ic) (Max) 28A
Configuration Three Phase Inverter

Others

Standard Package 25

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

 Paypal
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 Western Union
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 MoneyGram
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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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