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MIXA225PF1200TSF

EXSHINE Part Number:EX-MIXA225PF1200TSF
Manufacturer Part Number:MIXA225PF1200TSF
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT MODULE 1200V 250A
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:MIXA225PF1200TSF
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
MIXA225PF1200TSF
In stock: 4455 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order MIXA225PF1200TSF online

US$ 111.62

Reference Marketing Price: US$ 111.62

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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 225A
Supplier Device Package Module
Series -
Power - Max 1100W
Package / Case Module
Operating Temperature -40°C ~ 150°C (TJ)
NTC Thermistor Yes
Mounting Type Chassis Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number MIXA225PF1200TSF
Input Capacitance (Cies) @ Vce -
Input Standard
IGBT Type PT
Expanded Description IGBT Module PT Half Bridge 1200V 360A 1100W Chassis Mount Module
Description IGBT MODULE 1200V 250A
Current - Collector Cutoff (Max) 300µA
Current - Collector (Ic) (Max) 360A
Configuration Half Bridge

Others

Standard Package 3

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

 Paypal
 Receiving: immediately.

 Western Union
 Receiving: 1-2 hours.

 MoneyGram
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 Alipay
 Receiving: immediately.

You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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